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Features
- Thirty-two gated integrator channels
- Dynamic range 0.1 pA to 100 μA
- Optional integrated HV supply
- Integrated actuator solenoid control
- Integrated digitisation and communications
- Integrated calibration test source
- Selection of current and charge integration modes
Applications
- Multi-electrode ionization chambers and ionization chamber arrays
- Multiwire proportional chambers operating in current mode
- Multiwire beam profile grids
- Multi-segment photodiode arrays
Options
- Auxiliary HV output for detector bias
- Alternative feedback capacitor options
Specifications
Operating principle | Gated integrator (charge integrating amplifier) |
Integration capacitor | Dual, selectable |
Input noise | < 10 fA rms + 1 fA rms per pF input load up to 100 pF (1 second integration, 10 pF capacitor, 0 V bias) |
Input offset current | < 100 fA at 0V bias, 25 C < 600 fA at 0V bias, 50 C < 200 fA at 400V bias, 25 C |
Stability Output drift | < 5 ppm / C / hour |
Integration time | User selectable, 100 μsec minimum |
Integration modes | 0: continuous current; 1: continuous charge, 2: lossless charge; 3: external gate integration; 4: externally-triggered burst mode |
External gate | 0/+5 V, 50 ohm or fiber-optic receiver, software-selectable |
Digitization | 16 bit bipolar, 250kHz |
Auxiliary HV PSU | (Factory option) 0 to 1000V programmable (polarity and maximum voltage factory selectable), 1mA max. Noise and ripple < 0.1% |
Power input | +24V (+/- 2V) DC, 350mA typ, 500mA max |
Controls | Two rotary switches for loop address and comms mode/baud rate |
Displays | Status LEDs (power, device status, comms mode, data transmission rcv/xmit). “HV on” LED |
Case material | Stainless steel sheet |
Weight | 1.64kg (3.6 lb) |
Operating environment | 10 to 35C (15 to 25 C recommended to reduce drift and offset) , < 70% humidity, non-condensing, vibration < 0.1g all axes (1 to 1000Hz |
Shipping and storage environment | -10 to 50C, < 80% humidity, non-condensing, vibration < 2g all axes, 1 to 1000Hz Hz |